Abstract
This report covers the fabrication of a fully transparent resistive random access memory (TRRAM) device based on an ITO (indium tin oxide)/ZnO/ITO capacitor structure and its resistive switching characteristics. The fabricated TRRAM has a transmittance of 81% (including the substrate) in the visible region and an excellent switching behavior under 3V. The retention measurement suggests that the memory property of the TRRAM device could be maintained for more than 10years. We believe that the TRRAM device presented in this work could be a milestone of future see-through electronic devices.
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