Abstract
We study how to manipulate by the $$\updelta $$?-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor $$\hbox {GaAs/Al}_{x}\hbox {Ga}_{1-x}\mathrm{As}$$GaAs/AlxGa1-xAs heterostructure. We demonstrate an obvious GMR effect in the device with a $$\updelta $$?-doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the $$\updelta $$?-doping. These interesting results will be helpful for designing controllable GMR devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
