Abstract
We report on a theoretical study of the influence of a δ-doping on a giant magnetoresistance (GMR) device based on a magnetically confined GaAs/AlxGa1⿿xAs heterostructure. The δ-doping dependent transmission and conductance of the device are calculated. It is shown that there still exists an obvious GMR effect even the inclusion of a δ-doping. It is also shown that the magnetoresistance ratio (MR) of the device can be switched by changing the weight and/or position of the δ-doping. These interesting features provide an alternative way to manipulate a GMR device, and the structure can be employed as a structurally controllable GMR device for magnetoelectronics applications.
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