Abstract
We have explored the application of chemical derivatives of C60 as high-resolution electron beam resists. Facile spin coating was used to produce ∼100-nm-thick films of a C60 tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of ∼1 mC/cm2 for 20 keV electrons, an order of magnitude higher than that of C60 itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced.
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