Abstract
The authors report on the development of a feedback-type BiCMOS logic gate using a 0.5- mu m BiCMOS technology. The propagation delay time of a three-input NAND gate with a 0.93-pF load is 245 and 290 ps at a supply voltage of 4.5 and 4 V, respectively. These values are about 1.4-1.2 times better than the 0.8- mu m BiCMOS gate operating at 5 V. A power dissipation of 0.4 mW was obtained with a 0.93-pF load, 4-V supply voltage, and 140-MHz operation. The power dissipation is comparable to that of a CMOS gate. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
