Abstract
We present new types of circuits for dynamic logic gates in CMOS and BiCMOS technologies which use a diode to control precharge and predischarge to decrease the output voltage swing. This technique improves both delay and power dissipation compared to conventional dynamic CMOS and BiCMOS logic gates. Analysis indicates an improvement in delay and power of 50% and 26%, respectively for dynamic CMOS and 10% and 26%, respectively for dynamic BiCMOS using V/sub dd/=1.5 V.
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