Abstract
Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source with integrated electroabsorption modulators and a passive Y-junction coupler. Threshold current values of 9.5 and 10.1 mA are obtained for two distinct wavelength sources operating continuous-wave (CW) coupled into the same output waveguide.
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