Abstract
A driving method of pixel circuit using amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) is proposed to improve the image quality of active matrix light-emitting diode displays. The proposed pixel circuit employs a diode-connected structure to compensate for variation in threshold voltage ( $V_{\sf {th}}$ ) of the a-IGZO TFT. In addition, the proposed driving method adopts negative bias annealing to suppress the $V_{\sf {th}}$ shift. The annealing time is optimized based on the experimental observation of the minimum $V_{\sf {th}}$ shift. After a stress time of 30000 s, the measurement results show that the $V_{\sf {th}}$ shift is reduced by 29.6%, using an optimized annealing time of 5% of one frame time. In addition, the maximum deviation in the emission current using the proposed driving method was measured to be less than 4.32% after a stress time of 30000 s.
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