Abstract
Heterojunction are used to form the source / body junction in Tunnel Field Effect Transistors (TFET) to shorten the tunneling distance to increase the ON current and also to regulate the ambipolar leakage. Various material structures, valance band and conduction band edges which regulating the tunneling distance are the essential parameters for determining the heterojunction TFET characteristics. Since Heterojunction structure increases the ON current by narrowing and lowering the tunneling barrier on the source side and also regulates the short channel effects and ambipolar leakage, in this paper, various device structures of heterojunction Tunnel Field Effect Transistors are discussed and the performances of various structures are compared.
Published Version
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