Abstract
A defect revealing etching technique for grown on <100> by LPE is reported. A chemical solution used with illumination produces protrusions in thin quaternary layers, which correlate well with dislocation pits in underlying and overlying layers. Using the new etchant, an increase in defect density in the active layer over the defect density in the buffer layer has been detected in lattice matched (≲0.04%) LED structures.
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