Static anti-solvent treatment on lead iodide in two-step deposition of methylammonium lead iodide perovskite thin films

Abstract

Static anti-solvent treatment is rarely employed for perovskite thin film fabrication, even though this method is dependent only on fewer thin film growth parameters as compared to the dynamic anti-solvent application. Thus, studies on the influence of static anti-solvent treatment on the properties of perovskite thin films is important to gain insight to the growth processes, which is very scarce as well. In this study, we investigate the static anti-solvent treatment to tailor the morphology of Lead Iodide (PbI2) thin films for the fabrication of precursor-free Methylammonium Lead Iodide (MAPI) perovskite thin films through the two-step deposition method using Chlorobenzene as an anti-solvent. Remarkable influence of the anti-solvent loading time on the film morphology of PbI2 and MAPI thin films is observed. The crystallinity of PbI2 decreases upon increasing the anti-solvent loading time. A complete conversion of the precursors to MAPI along with the largest grain size are attained even at short loading times, ∼5s. Grain size does not increase considerably at higher loading times. Linear absorption studies on MAPI thin films show an increase in the Urbach energy with an increase in the loading time, which indicates an increase in the defect density. The increase in defect density with anti-solvent loading time is attributed to the concurrent decrease in the crystallinity of the PbI2 thin film. Steady-state and time-resolved photoluminescence (PL) studies performed on the MAPI thin films show highest PL intensity and life time at an optimum anti-solvent loading time (∼5s), which arises due to the trade off between largest grain size and lowest defect density. These observations not only highlights the need for an optimum crystallinity in the PbI2 thin films for the fabrication of superior quality MAPI thin films but also infers an optimum static anti-solvent loading time as the increase in grain size and life time enhances the device performance while an increase in defect density degrades the performance.