Role of defect density in absorber layer of ternary chalcogenide Cu2SnS3 solar cell

Abstract

Ternary Chalcogenide Cu 2 SnS 3 (CTS) has emerged as a potential candidate for light absorbing material for photovoltaic solar cells owing to its tuneable bandgap, abundance in earth's crust and low toxicity. The PV performance of CTS solar cells has been assessed using Solar Cell Capacitance Simulator (SCAPS-1D) in the present study. The influence of defects in ascertaining the CTS solar cells' photovoltaic performance has been described. The impact of various type of defects and their density on V oc , J sc , FF and η has been evaluated. Change in energy band diagrams due to change in defect density has been analysed. Quantum Efficiency curves for different defect densities in CTS solar cells have been investigated. The increment in defect density in the CTS absorber has been found to degrade CTS solar cell performance regardless of the type of defect. • The PV performance of ternary chalcogenide CTS solar cells has been evaluated by using SCAPS-1D. • The increase in defect density in the CTS absorber layer has been found to degrade the performance of CTS solar cell. • With increase in defect densities, the quantum efficiency decreases. • Optimum defect density in CTS layer has been found to be 10 14 cm − 3 , above which the solar cell performance deteriorates.