Abstract
Indium tin oxide (ITO) film was deposited by the traditional direct current (DC) pulsed magnetron sputtering technology. With the increase of reverse time from 0 to 4.0 μs, the crystal structure of ITO film changed from the polycrystalline structure without preferred orientation to (1 0 0) preferred orientation. ITO film with (1 0 0) preferred orientation showed the satisfactory optical and electrical properties, such as the band gap in 4.15 eV and carrier concentration in 4.25 × 1020/cm3. Based on DC pulsed voltage waveform, the formation of (1 0 0) preferred orientation, as well as the change of optical and electrical properties of ITO film, were analyzed logically.
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