Abstract
We have investigated the molecular-beam-epitaxial growth and optical properties of InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum well structures. Photoluminescence and absorption measurements were made to characterize the various structures. Low-temperature excitonic linewidths as small as 1.2–2.4 meV have been obtained in 80–120-Å InxGa1−xAs/GaAs (0.07≤x≤0.20) single and multiple quantum wells up to total thicknesses of 2.0 μm. The Stokes shift in these samples is ∼1–2 meV. This result is independent of the absence or presence of an intermediate composition buffer layer and indicates that the latter does not influence the optical properties of strained multiquantum wells. The growth kinetics and growth modes are more important factors in this respect.
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