Abstract
A detailed investigation on dc and high frequency properties of silicon single drift Impatt devices is presented for device operation at the frequencies of 35, 94, 140 and 220 GHz which are the atmospheric window frequencies for mm—wave signals. A comparative account of device properties of n+ pp+ and p+ nn+ SDRs is also presented. Single drift Impatts at frequencies beyond 100 GHz are characterised by very high electric fields at the metallurgical Junction, wide avalanche zone and low breakdown and drift voltages. The magnitude of field maximum for Si n+ pp+ SDR increases from a value of 38.5 V/μm to 93.7 V/μm when the frequency of operation increases from 10 GHz to 140 GHz. The ratio VD/VA for n+ pp+ diode which is nearly unity for X-band operation drops down to only 0.16 for operation at frequencies around 150 GHz. The computed values of normalized avalanche zone width of Si n+ pp+ diodes are found to be only 30%, 60% and 70% respectively for operation at 10 GHz, 94 GHz and 140 GHz as against the corre...
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