The Charge Plasma n-p-n Impact Ionization MOS on FDSOI Technology: Proposal and Analysis

Abstract

In this paper, we propose the charge plasma n-p-n impact ionization MOS (I-MOS) on a lightly doped p-type silicon film using the charge plasma concept. The performance of the proposed device is exhaustively investigated using 2-D simulations. The proposed device does not have metallurgical junctions and needs no chemical doping for creating the source and drain regions. Therefore, the proposed device combines the benefits of the bipolar I-MOS (low avalanche breakdown voltage and immunity toward the hot carrier injection) and a junctionless FET (low thermal budget process). The proposed charge plasma n-p-n I-MOS exhibits excellent electrical characteristics, such as a low avalanche breakdown voltage $(V_{B})$ of 2.123 V, a steep subthreshold swing of 4.53 mV/decade, and an $I_{\mathrm{\scriptscriptstyle ON}}/I_{\mathrm{\scriptscriptstyle OFF}}$ ratio of $\sim 10^{6}$ , as compared with the conventional bipolar I-MOS.