Abstract
In this study, we have reported experiments on interlayer performance of single and multi walled carbon nanotubes (SWCNTs and MWCNTs) for fabrication of n-InP substrates based diode applications and characterized with various methods to obtain ideal parameters. Structural and morphological properties of the nanotubes have been investigated by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM) measurements, respectively. The Au/SWCNTs/n-InP and Au/MWCNTs/n-InP diodes have been prepared at the same conditions and electrically analyzed in the temperature range of 80–320 K by steps of 20 K, using forward bias current-voltage (I–V) characteristics. In characterization stage, various methods such as standard, analytical, evolutionary algorithm and numerical methods have been used to determine the ideality factor, barrier height and series resistance values of the diodes. The performance of the methods was compared in their classes and it was tried to find solutions more easily than the others.
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