A comparative study on microstructures of β-FeSi 2 and carbon-doped β-Fe(Si,C) 2 films by transmission electron microscopy

Abstract

The microstructures of β-FeSi 2 and carbon-doped β-Fe(C,Si) 2 films, synthesized on Si substrates by metal vapor vacuum arc ion source ion implantor, are studied by transmission electron microscopy. Structure evolution at different annealing temperatures shows that, in comparison with undoped films, the C-doped film quality is improved as manifested by smooth β/Si interface, homogeneous film thickness, fine grains, and high thermal stability. When the energy and dosage are 60 KV and 4×10 17 ions/cm 2, amorphous layer is formed directly, which transforms into homogeneous and smooth β-FeSi 2 surface films after crystallization.