Abstract
In this paper, we compare two multi-guard ring geometries for n-on-p silicon particle detectors for high luminosity applications. One structure has p-type guard rings while the other has n-type guard rings with p-stop isolation between n+ implants. The pre-irradiation performance of the guard ring structures are studied as a function of oxide charge. It is found that for both structures, there is a value of oxide charge for which the breakdown voltage is maximum. The post-irradiation performance of the structures are evaluated with simulations up to a radiation fluence of 1×10+16 neq/cm2 using an existing three-level trap model for p-type FZ silicon. TCAD simulation has been used to simulate I-V characteristics, charge carrier concentration, electric field, and potential distribution.
Published Version
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