Abstract
Numerical calculation of the stationary distribution of electric field and charge carrier concentration in Gunn diode has been performed for the one-dimensional case. In addition, experimental investigations of the specified characteristics were also carried out by using a near-field microwave microscope. Taking into account the dependence of the majority carrier diffusion coefficient on the electric field intensity was shown to be of crucial importance in describing the processes occurring in Gunn diodes. The numerical results were in good agreement with the results of conducted experiment.
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