A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application

Abstract

A charge-based compact model of the long-channel cylindrical surrounding-floating gate (S-FG) MOSFETs for memory cell application is presented. The compact model is based on an accurate extraction of floating gate potential using charge balance model and solving the mobile charge density at the source and drain ends using the unified charge control model (UCCM). The drain-current relation is obtained from Pao-Sah's dual integral, which is expressed as a function of inversion charge at the source and drain end. The compact model for the floating gate potential and its transfer characteristics have been extensively verified with numerical simulations at various bias potentials and floating gate charges in all operating regions.