Abstract

A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.

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