Abstract
Packaging RF-MEMS devices require the parasitic effects of packaging to be minimal on the RF performance. In this paper, a 0-level packaging structure which utilizes TSVs in the cap wafer for electrical connection is proposed. To determine the RF performance of the package, transmission lines (CPW) were fabricated on high resistivity silicon (HRSi) substrates, and the grounding configuration optimized for. The package structures were based on actual RF-MEMS device layouts, which include test pads for DC biasing. A package loss of 0.1 dB was measured at 10 GHz. The RLGC parameters of TSVs in a GSG configuration were also extracted up to 12 GHz. Based on the transition, a 94-GHz antenna was also designed and characterized for.
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