Abstract

A 6-bit digital CMOS variable gain attenuator (VGAT) with 42 dB dynamic range (DR) and high linearity-in-dB was presented. CMOS transistors were used as the shunt devices and attenuation gains with different distribution rules of the shunt transistors (W/L)s were analyzed and simulated in detail. A geometric series with a length of 42 and a ratio of 1.122 was finally adopted for the (W/L)s to achieve the 42 dB DR and 1 dB attenuation step size. Fabricated in a 0.18-μm CMOS technology, the proposed VGAT had been integrated in a 4-channel ultrasonic imaging receiver chip and occupied an area of about 0.5 mm × 0.37 mm. The gain errors were limited in the range from −1 dB to −1.3 dB at 27 °C and the DR of the VGAT at different temperatures was retained above 40 dB. The –3 dB bandwidth was about 1.9 GHz at the maximum attenuation and the S11 was better than −11 dB with a 30 MHz input.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.