Abstract
The demand and requirement for high-capacity power electronic devices increase rapidly, and Integrated Emitter Turn-off Thyristor (IETO) has excellent performance in both on-state voltage drop and turn-off capability. An advanced 6-inch 4.5kV IETO device is proposed and developed, including optimized package and driver unit. A low thickness package with compact disc spring assemblies is put forward, which achieved excellent pressure distribution with the same thickness as IGCT for complex IETO structure. A composite signal extraction structure without hindrance for ceramic seal is also proposed. Several electromagnetic transient problems during large current turn-off are analyzed, such as the emitter voltage oscillation during commutation, the damping characteristics of gate control signals, and the induced voltage on signal extraction structure. Based on the analysis, a new external driver unit with higher reliability for large current is designed. After optimization, a prototype was developed with all problems solved. According to the experiments, the 6-inch 4.5 kV IETO achieved 17.5 kA turn-off current, and the transient characteristics were verified. The commutation time is less than 300ns, which has enormous potential for larger turn-off current with better GCT wafers. Compared to the other GCT based devices, the IETO in this paper reaches the maximum turn-off current.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call