Abstract
This brief presents a 52–58 GHz power amplifier (PA) with constant output power across the entire band. A new topology based on the impedance transformation of transmission lines was adopted as the inter-stage matching network. Compared with the conventional 2-section LC matching topology, our approach reduced the matching loss by 1.5 dB at 54 GHz. Such topology made the design capable of operating at a frequency close to 80% of the unit-current-gain cut-off frequency ( $f_{T}$ ) specified by the device technology. Additionally, stacked-FET was adopted as the power stage for the output power enhancement in a broadband sense. Implemented in the commercially available 0.15- $\boldsymbol{\mu }\text{m}$ GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process, the 2-stage PA demonstrated a small-signal gain of 14.7 dB, a saturated output power ( $P_{sat}$ ) of 18.6 dBm, and a maximum power-added-efficiency (PAE) of 18.2% at 54 GHz.
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