Abstract
A three-dimensional analytical model for the threshold voltage is developed by solving Poisson's equation for trench-isolated MOSFET devices with uniform substrate doping. The analytical expression is the first developed to include the coupling effect of both the inverse narrow width effect (INWE) and short channel effect which result from the mutual modulation of the depletion depth of the small size device. An expression for surface potential distribution is also obtained which shows the enhanced surface potential at the edges of channel width due to the electric field fringing effect. To check the accuracy of the present model the results are compared with 3D MICROMOS Simulator [L. A. Akers and K. L. Hsueh, SIAM Tech. Abstr. 22a, xx (1985)]. Good agreements have been obtained for wide ranges of channel width and length.
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