Abstract
In this paper, a new series connection topology is introduced for Silicon Carbide (SiC) MOSFETs module. In the topology, with a single external gate drive, three series connected SiC MOSFETs are synchronously driven. The operating principle of the proposed topology is analyzed and presented. In order to improve the current capability of the module, parallel connection of two SiC devices are also demonstrated. A 3600 V/80 A configuration of three devices in series and two branches in parallel is constructed with 1200 V/40 A discrete SiC MOSFETs. Dynamic switching behavior of the configuration is completed at 2300 V/78 A. Experimental results verify the validity and feasibility of the proposed method. Analysis for circuit switching speed and switching losses is given based on experimental results.
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