Abstract
Dual channel transistor structures utilizing real-space-transfer (RST) offer the potential for fast switching and negative differential resistance. We have built a two channel heterostructure field effect transistor (FET) incorporating a modulation doped 2-dimensional electron gas (2DEG) and a thin channel of low-temperature-grown GaAs containing As precipitates. The low mobility characteristic of low-temperature-grown GaAs provides a large mobility ratio, which is a prerequisite for a high speed, mobility modulation transistor utilizing RST.A series of dual channel FET structures with different channel lengths has been fabricated and characterized by capacitance-gate voltage, transconductance, and current-voltage measurement. These measurements, performed over a 77-300K temperature range, confirm the presence of two distinct channels separated by a 6nm AlAs layer, Carrier concentration versus depth was determined using a layer-by-layer depletion approximation. Mobility as a function of depth was then calculated using transconductance. A 2DEG/low-temperature-grown GaAs channel mobility ratio of 41 was measured at 77K.
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