Abstract
In this paper, we propose a novel analytical model for accurate and efficient simulation of integrated circuits with short channel heterostructure field effect transistors (HFETs). The proposed model for short channel HFETs is based on an analytical expression of the voltage-dependent two-dimensional electron gas density, which is either a linear or logarithmic function of the gate voltage. This compact model accurately describes the electrical characteristics of HFETs over the whole operation range including linear, saturation, and subthreshold operation without any discontinuity, which is known to be a detrimental factor for accurate modeling and simulation of analog and digital integrated circuits with field effect transistors. This new compact model has been verified with experimental data obtained from an Al 0.3Ga 0.7As/GaAs/In 0.13Ga 0.87As double heterojunction pseudomorphic HFET with a gate length L g=1 μm.
Published Version
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