Abstract
The aim of this work is the study of the Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structure. This study is carried out by means of the two-dimension numerical resolution of Poisson’s equation with a model of state continuum in the bandgap and at the Si/SiO2 interface. By fitting experimental C(V) data with computed results, both grain boundary state and interface state distributions are determined.
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