A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions

A-C. Salaün,B. Fortin,H. Lhermite,O. Bonnaud

doi:10.1007/978-3-7091-6619-2_103

A 2-D modeling of Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structures for the determination of interface state and grain boundary state distributions

A-C. Salaün, B. Fortin + Show 2 more

https://doi.org/10.1007/978-3-7091-6619-2_103

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Publication Date: Jan 1, 1995

Affiliation: French National Centre for Scientific Research

#Interface State Distributions #Boundary State + Show 7 more

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Abstract

The aim of this work is the study of the Metal-Oxide-Polycrystalline Silicon-Silicon (MOPS) structure. This study is carried out by means of the two-dimension numerical resolution of Poisson’s equation with a model of state continuum in the bandgap and at the Si/SiO2 interface. By fitting experimental C(V) data with computed results, both grain boundary state and interface state distributions are determined.

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