Abstract
This letter presents a 26/38-GHz dual-band filtering balanced power amplifier (PA) using 100-nm GaAs process. Dual-band branch-line couplers are proposed for the balanced PA, which also engage into the dual-band input–output impedance matching and provide out-of-band rejection simultaneously. The proposed PA achieves the saturation output power ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$P_{\text {sat}}$ </tex-math></inline-formula> ) of 27.7/26.9 dBm, output 1-dB compression point (OP <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathrm {1\,dB}}$ </tex-math></inline-formula> ) of 27.1/25.6 dBm, peak power-added efficiency (PAE) of 31.5%/22.8%, and small signal gain of 22.4/15.8 dB at 26/38 GHz. At frequencies of 12, 34, and 45 GHz, the small signal suppressions are 45, 54, and 40 dBc, respectively. In virtue of the high output power in 5G band n258/n260 and good out-of-band rejection, the proposed PA can be a potential candidate for 5G applications.
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