Abstract
AbstractThis article presents a 2‐GHz fully‐differential CMOS power amplifier (PA) fabricated in a standard 0.35‐μm RF CMOS process. Virtual grounds are introduced at both drive‐stage and output‐stage transistors' sources of the two‐stage differential PA, which guarantees a stable reference ground and thus improves the PA performance. A performance of 15‐dB gain, 26.6 dBm Pout, and 26% PAE is achieved. At 15 dBm Pout, the ACPR1 and ACPR2 are −35.3 and −66.3 dBc, respectively. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2780–2784, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22849
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