Abstract

AbstractIn this work, we propose a power amplifier using a stacked NMOS, transformer, and a PMOS structure to enhance the reliability of CMOS power amplifiers. The power stage of the amplifier is separated into NMOS and PMOS amplifier stages to moderate the peak voltages at the drains of each NMOS and PMOS. The power generated in the 2 amplifier stages is combined in the transformer, which has 2 primary parts and 1 secondary part. To verify the functionality of the structure, we designed a 2.4‐GHz differential CMOS power amplifier for IEEE 802.11n WLAN applications with 64 quadrature amplitude modulation, 9.6 dB peak‐to‐average power ratio, and a bandwidth of 20 MHz. The designed power amplifier is fabricated using the 180‐nm silicon‐on‐insulator RF CMOS process. The measured maximum linear output power is 17.88 dBm with a gain of 24.34 dB.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.