A 2.99 dB NF 15.6 dB Gain 3-10GHz Ultra-wideband low-noise amplifier for UWB systems in 65 nm CMOS

Abstract

A low noise figure (NF) and high power gain (S21) 3–10 GHz ultra-wideband (UWB) low noise amplifier (LNA) in 65 nm CMOS technology is proposed for UWB system which has a high figure of merit. A shunt–shunt resistive feedback technique is used to achieve wideband input impedance matching. A differential current-reused structure is used to achieve high common noise suppression and low power consumption. The implemented LNA achieves a high and flat aS21 of 15.6 ± 1.07 dB with an input return loss (S11) which is better than − 8.7 dB and a low NF of 2.99 ± 0.18 dB at frequencies of 3–10 GHz. The measured input third-order intermodulation point (IIP3) is − 5.7 dBm at 6 GHz.