A 1.2-V Operation Power Pseudomorphic High Electron Mobility Transistor for Personal Handy Phone Handset Application

Abstract

A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2 V drain bias with an output power of 22.18 dBm. Under 1.9 GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacent channel leakage power (Padj) of -56.86 dBc at 600 kHz apart from the center frequency and a linear efficiency of 41.31%. This is the first report on the 1.2-V operation power PHEMT for PHS handset application so far.