A 1.2 V to 3 V Low Power Resistor-Less All-MOSFET Voltage Reference Generator

Abstract

The generation of a voltage reference signal under low power conditions is complicated due to the massive influence of temperature variations. In this work, All-MOSFET resistor-less low power solutions are presented in order to obtain a temperature independent voltage reference. The design is based on the generation of two supply independent signals with Proportional To Absolute Temperature (PTAT) slope and Complementary To Absolute Temperature (CTAT) slope. Furthermore, a biasing circuit with low reference current is used in order to control the power consumption over a wide temperature range. The circuit design and layout has been done using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.13\ \mu \mathrm{m}$</tex> technology. The post-layout simulation results show that the circuit generates a voltage reference signal <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{ref}$</tex> of 0.961 V within a supply voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{DD}$</tex> range of 1.2 V to 3 V giving a line sensitivity of 0.98 %/V. The total power consumption is 114 nW at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{DD}$</tex> of 1.2 V and temperature of 27°C. The Temperature Coefficient (TC) is 125 ppm/°C over a temperature range of 0 °C to 100°C. The Power Supply Rejection Ratio PSRR is −41.94 dB at 1 Hz, −41.76dB at 10Hz, and −35.13dB at 100Hz.