Abstract
A broadband low-noise amplifier (LNA) is presented in this letter. By using multiple bandwidth extension methods, including feedback, shunt, and double series peaking techniques, the proposed LNA achieves a measured average gain of 26.5 dB from 1 to 40 GHz and minimal noise figure of 2.8 dB with better than 9-dB input-output return loss. The circuit is fabricated using 0.15-μm GaAs E-mode pseudomorphic high-electron-mobility transistor (pHEMT) process with 1.06-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> chip area. The LNA is supplied by a single dc voltage of 4.5 V. The proposed LNA achieves the bandwidth comparable to that of the distributed amplifier (DA) while obtaining higher power gain than DA fabricated using the similar process.
Published Version
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