Abstract
In this paper, a broadband low noise amplifier (LNA) is presented with 70nm GaAs metamorphic high electron mobility transistor (MHEMT) process. The feedback and input/output impedance match techniques for broadband amplifier are presented. The stability, noise figure, gain flatness, and S-parameter performance of this LNA are analyzed and discussed. The small signal gain of the LNA is 20dB±0.2dB and noise figure of 0.86dB~1.35dB among operating from almost DC to 15GHz. This LNA exhibits reflection below -10dB, power dissipation of 70mW and chip area of 1.0mm*0.6mm. This LNA finds its application in many wideband systems.
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