Abstract
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorphic High Electron Mobility Transistor (mHEMT) process have been developed. Cryogenic performance of a 4–12 GHz and a 25–34 GHz LNAs is presented. The 4–12 GHz LNA cooled at 15 K exhibits an associated gain of 31.5 dB ± 1.8 dB and average noise temperature of 5.3 K with a low power dissipation of 8 mW. Cooled to 15 K the 25–34 GHz amplifier has demonstrated a flat gain of 24.2 dB ± 0.4 dB with 15.2 K average noise temperature, and a very low power dissipation of 2.8 mW on chip. The mHEMT based LNA MMICs have demonstrated excellent noise characteristics at cryogenic temperatures for their use in radio astronomy applications.
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