Abstract
A low cost, broadband and compact antenna in package solution (AiP) is proposed for 60 GHz low-power radar sensor applications. Following a glass integrated passive device (Glass-IPD) manufacturing process, a compact low cost taper slot antenna (TSA) is designed on a substrate with a thickness beyond Yngvesson's range. To realize high gain and front-to-back ratio, the antenna is optimized by introducing a truncated ground. A 1 × 2 antenna array prototype is realized with a dummy transmission line chip in the dimension of 5 × 7.4 mm 2 . Including the flip chip interconnect, the measured results demonstrate a 10 dB impedance bandwidth of 47.2 ~ 67 GHz. The calculated gain is higher than 6.5 dBi in the end-fire direction over the entire 60 GHz band. Based on a physical RLC equivalent circuit, by co-design of the antenna with solder balls, the flip chip interconnect is compensated with a passive network. For the compensation network, its working bandwidth is from 0.1 to 67 GHz, while its insertion loss at 60 GHz is less than 0.2 dB.
Highlights
Recently, high demands have been generated for low-power millimeter wave broadband radar sensors by automotive electronics and internet of thing (IoT) applications [1], [2]
The antenna in package (AiP) solution has been proposed for the 60 GHz applications [6]–[6], showing superior advantages on the high integration level
Several mmWave AiP solutions have been demonstrated with the glass integrated passive device (GlassIPD) process, which utilizes an integrated circuit manufacturing process, improving the reliability and reducing the fabrication complexity and cost [8]–[16]
Summary
High demands have been generated for low-power millimeter wave (mmWave) broadband radar sensors by automotive electronics and internet of thing (IoT) applications [1], [2]. In this paper, based on a low-cost Glass-IPD manufacturing process, a broadband compact taper slot antenna (TSA) is designed on a high dielectric constant glass substrate with a single layer metal and an effective thickness beyond the Yngvesson’s range [18]. To avoid oxidation, M1 is covered with a 10 μm thick polyimide layer (εr = 3.2 and tanδ = 0.001) With this Glass-IPD manufacturing process, the measured insertion loss of a 50 CPW line is 0.27 dB/mm at 60 GHz. are realized on M1. With the RF chip, the glass substrate is assembled on the main PCB with BGA (ball grid array) balls for low-speed signal, power distributed networks and ground connections In this design, to test the AiP performance first, all the low-speed and power segments are not fabricated
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