A 0.6–4.5 GHz inductorless CMOS low noise amplifier with gyrator-C network

Abstract

In this study, we present an inductorless wideband low noise amplifier (LNA) for a multi-standard receiver. Adopting a gyrator-C network and a thermal noise cancelling structure with a common-drain feedback stage, a low noise figure and broadband frequency operation of an LNA were obtained. It was fabricated in a TSMC 0.18-μm CMOS process. This LNA achieved a power gain of 12 dB, a minimum noise figure of 2In this study, we present an inductorless wideband low noise amplifier (LNA) for a multi-standard receiver. Adopting a gyrator-C network and a thermal noise cancelling structure with a common-drain feedback stage, a low noise figure and broadband frequency operation of an LNA were obtained. It was fabricated in a TSMC 0.18-μm CMOS process. This LNA achieved a power gain of 12 dB, a minimum noise figure of 2.9 dB, a third-order input intercept point (IIP3) of -6.2 dBm at maximum gain, and an S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> of under -10 dB in a frequency range from 600 MHz to 4.5 GHz. The total power consumption was 21.4 mW with a 2.5 V supply, and the chip area was 0.4 × 0.2 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ..9 dB, a third-order input intercept point (IIP3) of -6.2 dBm at maximum gain, and an S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> of under -10 dB in a frequency range from 600 MHz to 4.5 GHz. The total power consumption was 21.4 mW with a 2.5 V supply, and the chip area was 0.4 × 0.2 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .