Abstract

ABSTRACTA self‐biased inductorless wideband low‐noise amplifier (LNA) is proposed in this article. Both passive shunt feedback and interleaving active‐loop techniques are used to achieve enhanced bandwidth (BW), wideband input matching, and a low noise figure (NF). The LNA is implemented using a standard 0.18 μm CMOS process. The measured maximum power gain is 19.4 dB with a −3 dB BW between 0.1 and 6 GHz and the minimum NF is 3.2 dB. The input and output return losses are both below −10 dB over entire 0.1–6.8 GHz. The power consumption is 52 mW from a supply of 1.8 V and the core area is only 0.016 mm2. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2755–2758, 2014

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