A 0.1–1 GHz low power RF receiver front-end with noise cancellation technique for WSN applications

Abstract

A low power 0.1–1GHz RF receiver front-end composed of noise-cancelling trans-conductor stage and I/Q switch stage was presented in this paper. The RF receiver front-end chip was fabricated in 0.18µm RF CMOS. Measurement results show the receiver front-end has a conversion gain of 28.1dB at high gain mode, and the single-sideband (SSB) noise figure is 6.2dB. In the low gain mode, the conversion gain of the receiver front-end is 15.5dB and the IP1dB is −12dBm. In this design, low power consumption and low cost is achieved by current-reuse and inductor-less topology. The receiver front-end consumes only 5.2mW from a 1.8V DC supply and the chip size of the core circuit is 0.12mm2.