976 nm and 808 nm dual-GSA-wavelength pumped 3 µm erbium-doped solid-state laser.

Abstract

A dual-wavelength pumping scheme at 976 nm and 808 nm is proposed to improve the performance of 3 µm Er:YAP laser. 976 nm and 808 nm correspond to the ground state absorption processes of 4I15/2→I11/2 and 4I15/2→I9/2, respectively. The experimental results indicate that the introduction of 808 nm pumping not only increases the total inversion population, but also can adjust the population distribution among the sublevels in the upper and lower manifold, thus supporting higher output power and multiple wavelengths emissions. Under the single-wavelength pumping, the maximum output powers of 1.192 W and 0.223 W are obtained for 976 nm and 808 nm pumping, respectively. With regard to the 976/808 nm dual-wavelength pumping, the achievable maximum output power is 1.398 W, increased by 17.3% compared to the case of single-wavelength pumping at 976 nm. The dual-wavelength pumped Er:YAP laser can also operate in a state of multi-wavelength emissions at 2.79 µm, 2.82 µm and 2.92 µm with different dual-wavelength pump power combinations. Considering the broadband absorption characteristics of ground state absorption and the convenience of obtaining near-infrared laser diodes pumping sources, the proposed dual-wavelength pump scheme shows great potential to realize high-power, high-efficiency 3 µm erbium-doped solid-state lasers with better cost-effectiveness and more compact structure.