GSA and ESA dual-wavelength pumped 2.3 μm Tm:YLF laser on the 3H4→3H5 transition

Abstract

The population trapping effect of the F34 level is an important factor limiting the power scaling of the 2.3 μm thulium (Tm) laser on the H34→H35 transition. In this Letter, we demonstrate a novel scheme of ground state absorption (GSA) (H36→H34) and excited state absorption (ESA) (F34→H34) dual-wavelength pumped 2.3 μm Tm lasers. Introducing an ESA pumping process can accurately excite the Tm3+ ions accumulated in the F34 level to the H34 level, constructing a double populating mechanism for the upper laser level H34. A proof-of-principle experimental demonstration of the GSA (785 nm) and ESA (1470 nm) dual-wavelength pumped 2.3 μm Tm:LiYF4 (Tm:YLF) laser was realized. A maximum continuous-wave output power of 1.84 W at 2308 nm was achieved under 785 and 1470 nm dual-wavelength pumping, increased by 60% compared with the case of 785 nm single-wavelength pumping under the same resonator condition. Our work provides an efficient way to achieve higher output power from 2.3 μm Tm-doped lasers on the H34→H35 transition.