Abstract
In this study, delamination tests using a sandwich type specimen are conducted for eight combinations of materials, thin films on silicon substrate, in order to develop a method for quantitative evaluation and comparison of crack initiation strength from the free edge. Stress distribution along interface at the crack initiation is analyzed by boundary element method. Since the order of stress singularities, λ, in the materials are less than 0.07, the stress field near the interface edge is almost constant in atomic level. Then, the critical strength for the interface cracking is quantitatively represented by the concentrated stress near the edge, σ_<ya>・Based on this critical stress, the effects of the several factors such as existence of oxidized interlayer, species of thin film materials and deposition process of thin film on the interface strength are examined as well.
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call