Abstract
An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transinipedance amplifier, and a 50Ω output buffer has been fabricated using an enhancement/depletion 0.5/an recessed-gate AIGaAs/GaAs HEMT process. Successful operation at data rates up to lOGbit/s has been demonstrated.
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