Abstract
A monolithic optoelectronic receiver, consisting of an MSM photodiode and a transimpedance (TZ) amplifier, based on the AlGaAs/InGaAs doped-channel heterostructure, has been fabricated and investigated. The TZ amplifier demonstrated a transimpedance gain (ZT) of 2.1 kΩ and a 3 dB bandwidth of 7.6 GHz by a 1 μm gate-length technology, resulting in a transimpedance–bandwidth product (ZT⋅BW) of 17 GHz⋅kΩ. A 100×100 μmMSM photodetector (MSM–PD) with a 2 μm finger width and a 4 μm finger spacing demonstrated a responsivity of 0.25 A/W with a dark current of 10 nA at 5 V. The 3 dB bandwidth of this integrated optical receiver is 2.3 GHz. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 27: 79–80, 2000.
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