Abstract
The thermodynamic and kinetic processes which are involved in the early stages of crystal growth are discussed, with especial reference to vapor deposition of thin films. The atomic processes taking place during deposition are described in terms of rate and diffusion equations; the concept of “competitive capture” is outlined, where adatoms are forced to choose between competing sinks. The use of microscopy and surface physics techniques to study nucleation in films is emphasised. Examples of island (Volmer-Weber), layer (Frank-van der Merwe) and layer plus island (Stranski-Krastanov) growth in metal/insulator, metal/semi-conductor and semiconductor/semiconductor deposition systems are given.
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